Nexperia B.V. Low-leakage triple switching diode BAS116VYX

Description
Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: max. 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V Repetitive peak reverse voltage: maximum 85 V Repetitive peak forward current: maximum 500 mA Applications Low-leakage current applications in surface mounted circuits
  • Low-leakage triple switching diode - BAS116VYX - Nexperia B.V.
    Nexperia B.V.
  • BAS116VYX - Rochester Electronics
    Rochester Electronics
  • Diode Arrays - 1727-BAS116VYXTR-ND - DigiKey
    DigiKey
  • Diode Arrays - 1727-BAS116VYXDKR-ND - DigiKey
    DigiKey
  • Diode Arrays - 1727-BAS116VYXCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: max. 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V Repetitive peak reverse voltage: maximum 85 V Repetitive peak forward current: maximum 500 mA Applications Low-leakage current applications in surface mounted circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Low-leakage triple switching diode - BAS116VYX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
Low-leakage triple switching diode
BAS116VYX
Low-leakage triple switching diode BAS116VYX
Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: max. 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V Repetitive peak reverse voltage: maximum 85 V Repetitive peak forward current: maximum 500 mA Applications Low-leakage current applications in surface mounted circuits

Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low leakage current: max. 5 nA
  • Switching time: typical 0.8 µs
  • Continuous reverse voltage: maximum 75 V
  • Repetitive peak reverse voltage: maximum 85 V
  • Repetitive peak forward current: maximum 500 mA

Applications

  • Low-leakage current applications in surface mounted circuits
Supplier's Site Datasheet
- BAS116VYX - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BAS116VYX
BAS116VYX
Low-leakage triple switching diode

Low-leakage triple switching diode

Supplier's Site Datasheet
Diode Arrays - 1727-BAS116VYXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Diode Arrays
1727-BAS116VYXTR-ND
Diode Arrays 1727-BAS116VYXTR-ND
DIODE ARRAY GP 75V 180MA 6-TSSOP

DIODE ARRAY GP 75V 180MA 6-TSSOP

Buy Now Datasheet
Diode Arrays - 1727-BAS116VYXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Diode Arrays
1727-BAS116VYXDKR-ND
Diode Arrays 1727-BAS116VYXDKR-ND
DIODE ARRAY GP 75V 180MA 6-TSSOP

DIODE ARRAY GP 75V 180MA 6-TSSOP

Buy Now Datasheet
Diode Arrays - 1727-BAS116VYXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Diode Arrays
1727-BAS116VYXCT-ND
Diode Arrays 1727-BAS116VYXCT-ND
DIODE ARRAY GP 75V 180MA 6-TSSOP

DIODE ARRAY GP 75V 180MA 6-TSSOP

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey
Product Category Diodes Diodes Diode Arrays
Product Number BAS116VYX BAS116VYX 1727-BAS116VYXTR-ND
Product Name Low-leakage triple switching diode Diode Arrays
Diode Applications Switching; Low Leakage Switching
RoHS Compliant RoHS RoHS
VF 1000 to 1 volts
VR 75 volts
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