Nexperia B.V. Low-leakage diode BAS116LYL

Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

Features and benefits

• Switching time typical: t_rr = 0.8 µs
• Low leakage current typical: I_R = 3 pA
• Repetitive peak reverse voltage: V_RRM ≤ 85 V
• Low capacitance typical: C_d = 2 pF
• Leadless ultra small SMD plastic package
• Low package height of 0.48 mm

Applications

• Low-leakage current applications
• General-purpose switching

BAS116L - Low-leakage diode DFN 2-Pin Product overview: BAS116LYL from Nexperia is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DFN. Search-friendly keywords include diode, rectifier, Schottky, switching diode, DFN, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-BAS116LYL can be used for catalog matching and distributor lookup.

Win Source Part Number: 1367312-BAS116LYL
Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Fake Threat In the Open Market: 44 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: SOD-882
Supplier Device Package: DFN1006-2
Base Product Number: BAS116
Technology: Standard
Mounting Type: Surface Mount
HTSUS: 8541.10.0070
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 325mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Operating Temperature - Junction: 150°C (Max)

DIODE STD 75V 325MA DFN10062

Diode Standard 75V 325mA (DC) Surface Mount DFN1006-2

DIODE GP 75V 325MA DFN1006-2