Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel Trench MOSFET, 60V, 300mA, Dual, 6-Pin Product overview: 2N7002BKS,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 300mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 300mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-2N7002BKS,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004054-2N7002BKS,11
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-TSSOP
Maximum Power Dissipation: 295mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 300mA
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 60V 300mA 295mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 300mA 295mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 300mA 295mW Surface Mount 6-TSSOP
MOSFET 2N-CH 60V 0.3A 6TSSOP
MOSFET 2N-CH 60V 0.3A 6TSSOP
MOSFET, NN CHANNEL, 60V, 0.3A, SOT363; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
60V 300mA 1.6Ω@10V,500mA 295mW 2.1V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N7002BKS,115 | 289-2N7002BKS,115 | 1004054-2N7002BKS,115 | 1727-4786-2-ND | 2N7002BKS,115 | 2N7002BKS,115 | 71T7230 | 2N7002BKS,115 |
| Product Name | 60 V, 300 mA dual N-channel Trench MOSFET | N-Channel Dual 60V 300mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002BKS,115 | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Nn Channel, 60V, 0.3A, Sot363; Channel Type Nexperia | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 300000 milliamps | 300 milliamps | 300 milliamps | |||||
| VGS(off) | 20 volts | 2.1 volts | ||||||
| PD | 295 milliwatts | 295 milliwatts | 295 milliwatts |
