Mini-Circuits SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 1000 MHz, 50Ω, Ceramic RAM-4+

Description
RAM-4+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a ceramic surface-mount package. RAM-4+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTBF is 300 years at +100°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN RF-IN 1 GND GND 2 4 3 GROUND RF-OUT and DC-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. E ECO-024944 RAM-4+ MCL NY 250320 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier RAM-4+ 50Ω DC to 1 GHz
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Description
RAM-4+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a ceramic surface-mount package. RAM-4+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTBF is 300 years at +100°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN RF-IN 1 GND GND 2 4 3 GROUND RF-OUT and DC-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. E ECO-024944 RAM-4+ MCL NY 250320 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier RAM-4+ 50Ω DC to 1 GHz
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Suppliers

Company
Product
Description
Supplier Links
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 1000 MHz, 50Ω, Ceramic - RAM-4+ - Mini-Circuits
Brooklyn, NY, United States
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 1000 MHz, 50Ω, Ceramic
RAM-4+
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 1000 MHz, 50Ω, Ceramic RAM-4+
RAM-4+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a ceramic surface-mount package. RAM-4+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTBF is 300 years at +100°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN RF-IN 1 GND GND 2 4 3 GROUND RF-OUT and DC-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. E ECO-024944 RAM-4+ MCL NY 250320 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier RAM-4+ 50Ω DC to 1 GHz

RAM-4+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a ceramic surface-mount package. RAM-4+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTBF is 300 years at +100°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN RF-IN 1 GND GND 2 4 3 GROUND RF-OUT and DC-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. E ECO-024944 RAM-4+ MCL NY 250320 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier RAM-4+ 50Ω DC to 1 GHz

Supplier's Site Datasheet
RF Amplifiers - 3157-RAM-4+TR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-RAM-4+TR-ND
RF Amplifiers 3157-RAM-4+TR-ND
SMT GAIN BLOCK, DC-1000 MHZ, 50

SMT GAIN BLOCK, DC-1000 MHZ, 50

Buy Now Datasheet
RF and Wireless - RF Amplifiers - RAM-4+ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
RAM-4+
RF and Wireless - RF Amplifiers RAM-4+
SMT GAIN BLOCK, DC-1000 MHZ, 50

SMT GAIN BLOCK, DC-1000 MHZ, 50

Supplier's Site

Technical Specifications

  Mini-Circuits DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers RF Amplifiers
Product Number RAM-4+ 3157-RAM-4+TR-ND RAM-4+
Product Name SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 1000 MHz, 50Ω, Ceramic RF Amplifiers RF and Wireless - RF Amplifiers
RoHS Compliant RoHS RoHS
Operating Temperature -54 to 100 C (-65 to 212 F)
Frequency Range 1000 MHz 0.0 to 1000 MHz 0.0 to 1000 MHz
Minimum Gain 7.02 dB 8 dB ? to 8 dB
Maximum Gain 8.5 dB 8 dB 8 dB
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