Mini-Circuits SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 8000 MHz, 50Ω, 3x3 mm QFN Style Package LEE-19+

Description
LEE-19+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a 3 x 3 mm MCLP molded plastic package. Expected MTBF is 3,000 years at +85°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN INDEX ON TOP RF-IN RF-IN (1) GND (2) GND (4) BOTTOM RF-OUT and VIEW DC-IN (3) GROUND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. L ECO-024941 LEE-19+ MCL NY 250320 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier LEE-19+ 50Ω DC to 8 GHz
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Description
LEE-19+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a 3 x 3 mm MCLP molded plastic package. Expected MTBF is 3,000 years at +85°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN INDEX ON TOP RF-IN RF-IN (1) GND (2) GND (4) BOTTOM RF-OUT and VIEW DC-IN (3) GROUND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. L ECO-024941 LEE-19+ MCL NY 250320 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier LEE-19+ 50Ω DC to 8 GHz
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Suppliers

Company
Product
Description
Supplier Links
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 8000 MHz, 50Ω, 3x3 mm QFN Style Package - LEE-19+ - Mini-Circuits
Brooklyn, NY, United States
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 8000 MHz, 50Ω, 3x3 mm QFN Style Package
LEE-19+
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 8000 MHz, 50Ω, 3x3 mm QFN Style Package LEE-19+
LEE-19+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a 3 x 3 mm MCLP molded plastic package. Expected MTBF is 3,000 years at +85°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN INDEX ON TOP RF-IN RF-IN (1) GND (2) GND (4) BOTTOM RF-OUT and VIEW DC-IN (3) GROUND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. L ECO-024941 LEE-19+ MCL NY 250320 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier LEE-19+ 50Ω DC to 8 GHz

LEE-19+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a 3 x 3 mm MCLP molded plastic package. Expected MTBF is 3,000 years at +85°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN INDEX ON TOP RF-IN RF-IN (1) GND (2) GND (4) BOTTOM RF-OUT and VIEW DC-IN (3) GROUND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. L ECO-024941 LEE-19+ MCL NY 250320 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier LEE-19+ 50Ω DC to 8 GHz

Supplier's Site Datasheet
RF Amplifiers - 3157-LEE-19+DKR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-LEE-19+DKR-ND
RF Amplifiers 3157-LEE-19+DKR-ND
RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873

RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873

Buy Now Datasheet
RF Amplifiers - 3157-LEE-19+TR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-LEE-19+TR-ND
RF Amplifiers 3157-LEE-19+TR-ND
RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873

RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873

Buy Now Datasheet
RF Amplifiers - 3157-LEE-19+CT-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-LEE-19+CT-ND
RF Amplifiers 3157-LEE-19+CT-ND
RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873

RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873

Buy Now Datasheet
Laguna Hills, CA, United States
RF Amplifiers - LEE-19+
718976-LEE-19+
RF Amplifiers - LEE-19+ 718976-LEE-19+
Manufacturer: Mini-Circuits Win Source Part Number: 718976-LEE-19+ Manufacturer Homepage: www.minicircuits.com Reference Date Code: 1730+ Popularity: Low Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: Mini-Circuits
Win Source Part Number: 718976-LEE-19+
Manufacturer Homepage: www.minicircuits.com
Reference Date Code: 1730+
Popularity: Low
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now
RF and Wireless - RF Amplifiers - LEE-19+ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
LEE-19+
RF and Wireless - RF Amplifiers LEE-19+
IC AMP CELLULAR 0HZ-8GHZ FG873

IC AMP CELLULAR 0HZ-8GHZ FG873

Supplier's Site

Technical Specifications

  Mini-Circuits DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers RF Amplifiers RF Amplifiers
Product Number LEE-19+ 3157-LEE-19+DKR-ND 718976-LEE-19+ LEE-19+
Product Name SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 8000 MHz, 50Ω, 3x3 mm QFN Style Package RF Amplifiers RF Amplifiers - LEE-19+ RF and Wireless - RF Amplifiers
RoHS Compliant RoHS
Operating Temperature -45 to 85 C (-49 to 185 F)
Frequency Range 8000 MHz 0.0 to 8000 MHz 0.0 to 8000 MHz
Minimum Gain 9 dB 9 dB ? to 9 dB
Maximum Gain 12.1 dB 9 dB 9 dB
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