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Isobaud, Inc. Radiation Tolerant Hermetic Silicon Phototransistor IB14N1

Description
The IB14N1 / IB14N2 consist of silicon phototransistors mounted in a wide angle hermetic TO-18 package. Features Hermetic 3-pin TO-18 package Wide reception angle High reliability and rugged construction High reliability screening available Radiation tolerant Operating temperature range -65°C to +125°C Applications Encoders Position Sensors Level Detection
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Suppliers

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Description
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Radiation Tolerant Hermetic Silicon Phototransistor - IB14N1 - Isobaud, Inc.
Santa Clara, CA, USA
Radiation Tolerant Hermetic Silicon Phototransistor
IB14N1
Radiation Tolerant Hermetic Silicon Phototransistor IB14N1
The IB14N1 / IB14N2 consist of silicon phototransistors mounted in a wide angle hermetic TO-18 package. Features Hermetic 3-pin TO-18 package Wide reception angle High reliability and rugged construction High reliability screening available Radiation tolerant Operating temperature range -65°C to +125°C Applications Encoders Position Sensors Level Detection

The IB14N1 / IB14N2 consist of silicon phototransistors mounted in a wide angle hermetic TO-18 package.

Features

  • Hermetic 3-pin TO-18 package
  • Wide reception angle
  • High reliability and rugged construction
  • High reliability screening available
  • Radiation tolerant
  • Operating temperature range -65°C to +125°C

Applications

  • Encoders
  • Position Sensors
  • Level Detection
Supplier's Site Datasheet

Technical Specifications

  Isobaud, Inc.
Product Category Phototransistors
Product Number IB14N1
Product Name Radiation Tolerant Hermetic Silicon Phototransistor
Phototransistor Type Phototransistor
Material Silicon
Package Type Hermetic 3-pin TO-18
Mounting Option Plugin
Lead Length 12.7 mm (0.5000 inch)
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