Integra Technologies, Inc. BiPolar L-Band Avionics Transistor IB1011S350

  • BiPolar L-Band Avionics Transistor - IB1011S350 - Integra Technologies, Inc.
    Integra Technologies, Inc.
Description
The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating between 1030 and 1090. While operating in class C mode this common base device supplies a minimum of 350 watts of peak pulse power under the conditions of 10ìs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.

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BiPolar L-Band Avionics Transistor - IB1011S350 - Integra Technologies, Inc.
Integra Technologies, Inc.
El Segundo, CA, USA
BiPolar L-Band Avionics Transistor
IB1011S350
BiPolar L-Band Avionics Transistor IB1011S350
The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating between 1030 and 1090. While operating in class C mode this common base device supplies a minimum of 350 watts of peak pulse power under the conditions of 10ìs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.

The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating between 1030 and 1090. While operating in class C mode this common base device supplies a minimum of 350 watts of peak pulse power under the conditions of 10ìs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.

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Technical Specifications

  Integra Technologies, Inc.
Product Category Bipolar RF Transistors
Product Number IB1011S350
Product Name BiPolar L-Band Avionics Transistor
Transistor Technology / Material GaN
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