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Infineon Technologies AG N-Channel Power MOSFET BSC010N04LS6

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N-Channel Power MOSFET - BSC010N04LS6 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC010N04LS6
N-Channel Power MOSFET BSC010N04LS6
OptiMOS™ 6 40V power MOSFETs combining best-in-class RDS(on) with superior switching performance The OptiMOS™ 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. Applications 48V 12V DC-DC converter 48 V power distribution DIN rail power supplies Telecommunication infrastructure Vacuum cleaner Key features Compared to alternative products: RDS(on) reduced by 30% Improved FOM Qg x RDS(on) by 29% Improved FOM Qgd x RDS(on) by 46% Optimized for synchronous rectification Suited for ORing circuits RoHS compliant - halogen free MSL1 rated Key benefits Highest system efficiency Less paralleling required Increased power density Very low voltage overshoot Reduced need for snubber circuit System cost reduction Target applications SMPS Server Telecom Charger Drives Multicopter Wireless charging Designers who used this product also designed with 1ED44173N01B | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7550B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs BSC009NE2LS5I | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275K | Gate Driver ICs XDPP1100-Q024 | Digital Power Controllers BSC190N15NS3 G | N-Channel Power MOSFET ICE2QR2280G | Quasi Resonant CoolSET™ BSC0901NS | N-Channel Power MOSFET IGT60R070D1 | GaN transistors (GaN HEMTs) IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ086P03NS3 G | P-Channel Power MOSFET BSC077N12NS3 G | N-Channel Power MOSFET 1EDF5673K | Gate Driver ICs IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDN7534B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7550B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs BSC009NE2LS5I | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275K | Gate Driver ICs XDPP1100-Q024 | Digital Power Controllers 1 2 3 4 5

OptiMOS™ 6 40V power MOSFETs combining best-in-class RDS(on) with superior switching performance

The OptiMOS™ 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.


Applications

  • 48V 12V DC-DC converter
  • 48 V power distribution
  • DIN rail power supplies
  • Telecommunication infrastructure
  • Vacuum cleaner

Key features

  • Compared to alternative products:
    • RDS(on) reduced by 30%
  • Improved FOM Qg x RDS(on) by 29%
  • Improved FOM Qgd x RDS(on) by 46%
  • Optimized for synchronous rectification
  • Suited for ORing circuits
  • RoHS compliant - halogen free
  • MSL1 rated

Key benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • Very low voltage overshoot
  • Reduced need for snubber circuit
  • System cost reduction

Target applications

  • SMPS
  • Server
  • Telecom
  • Charger
  • Drives
  • Multicopter
  • Wireless charging

Designers who used this product also designed with


  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7550B |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • BSC009NE2LS5I |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDF7275K |
    Gate Driver ICs
  • XDPP1100-Q024 |
    Digital Power Controllers
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • ICE2QR2280G |
    Quasi Resonant CoolSET™
  • BSC0901NS |
    N-Channel Power MOSFET
  • IGT60R070D1 |
    GaN transistors (GaN HEMTs)
  • IPP60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSZ086P03NS3 G |
    P-Channel Power MOSFET
  • BSC077N12NS3 G |
    N-Channel Power MOSFET
  • 1EDF5673K |
    Gate Driver ICs
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDN7534B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7550B |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • BSC009NE2LS5I |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDF7275K |
    Gate Driver ICs
  • XDPP1100-Q024 |
    Digital Power Controllers

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC010N04LS6
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 1.00E-3 ohms
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