SP5T high isolation switch for feedback receive
BGS15MU14 is a perfect fit for concurrent transmit chains in UL-CA and MIMO RF design scenarios on input port feedback receive (FBRx).
It has a very small form factor with a maximum thickness of just 0.6 mm. BGS15MU14 has been designed to guarantee best-in-class isolation performance up to 6.0 GHz (>50 dB) in high demanding FBRx applications. It has the capability to increase flexibility of RF designs, reduce space and offer BOM cost savings.
The device is MIPI controlled. The on-chip controller allows power-supply voltages from 1.65 to 1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is externally applied.
Summary of Features
High port-to-port isolation up to 6.0 GHz
High linearity up to 20 dBm input power
Fast switching speed (180 ns).
MIPI RFFE 2.1 compliant control interface
Small package 1.5mm x 1.9mm
Ultra low profile leadless plastic package
RoHS and WEEE compliant package
Potential Applications
Feedback receive application in 5G mobile devices
Applications
Mobile devices and smartphones
Designers who used this product also designed with
BGA855N6 | GNSS LNAs
BGA824N6 | GNSS LNAs
BGS14MPA9 | RF Switches
BGSX22G6U10 | Antenna cross switches
BGS12P2L6 | RF Switches
BGS12WN6 | RF Switches
BGS18MA12 | RF Switches
BGAU1A10 | 4G/5G MIPI LNA and LNA Bank
BGA855N6 | GNSS LNAs
BGA824N6 | GNSS LNAs
BGS14MPA9 | RF Switches
BGSX22G6U10 | Antenna cross switches
BGS12P2L6 | RF Switches
BGS12WN6 | RF Switches
BGS18MA12 | RF Switches
BGAU1A10 | 4G/5G MIPI LNA and LNA Bank
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SP5T high isolation switch for feedback receive
BGS15MU14 is a perfect fit for concurrent transmit chains in UL-CA and MIMO RF design scenarios on input port feedback receive (FBRx).
It has a very small form factor with a maximum thickness of just 0.6 mm. BGS15MU14 has been designed to guarantee best-in-class isolation performance up to 6.0 GHz (>50 dB) in high demanding FBRx applications. It has the capability to increase flexibility of RF designs, reduce space and offer BOM cost savings.
The device is MIPI controlled. The on-chip controller allows power-supply voltages from 1.65 to 1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is externally applied.
Summary of Features
- High port-to-port isolation up to 6.0 GHz
- High linearity up to 20 dBm input power
- Fast switching speed (180 ns).
- MIPI RFFE 2.1 compliant control interface
- Small package 1.5mm x 1.9mm
- Ultra low profile leadless plastic package
- RoHS and WEEE compliant package
Potential Applications
- Feedback receive application in 5G mobile devices
Applications
- Mobile devices and smartphones
Designers who used this product also designed with
- BGA855N6 |
GNSS LNAs
- BGA824N6 |
GNSS LNAs
- BGS14MPA9 |
RF Switches
- BGSX22G6U10 |
Antenna cross switches
- BGS12P2L6 |
RF Switches
- BGS12WN6 |
RF Switches
- BGS18MA12 |
RF Switches
- BGAU1A10 |
4G/5G MIPI LNA and LNA Bank
- BGA855N6 |
GNSS LNAs
- BGA824N6 |
GNSS LNAs
- BGS14MPA9 |
RF Switches
- BGSX22G6U10 |
Antenna cross switches
- BGS12P2L6 |
RF Switches
- BGS12WN6 |
RF Switches
- BGS18MA12 |
RF Switches
- BGAU1A10 |
4G/5G MIPI LNA and LNA Bank
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