DPDT Antenna Cross Switch
The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.
The switch features direct-connect-to-ba
ttery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum thickness of 0.55 mm.
Summary of Features
RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
Ultra-low insertion loss and harmonics generation
0.1 to 6.0 GHz coverage
High port-to-port-isolati
on
No decoupling capacitors required if no DC applied on RF lines
General Purpose Input-Output (GPIO) Interface
Small form factor 1.1mm x 1.5mm
No power supply blocking required
High EMI robustness
RoHS and WEEE compliant package
Potential Applications
Multi-mode LTE and WCDMA multi antenna applications
Applications
Convenient, smart, and secure wearables supporting your health and well-being.
Information & communication technologies
Mobile devices and smartphones
On-board charging (OBC) for electric vehicles
Semiconductor solutions for home entertainment applications
Designers who used this product also designed with
BGS12WN6 | RF Switches
BGS14M8U9 | RF Switches
BGA9V1MN9 | 4G/5G MIPI LNA and LNA Bank
BGA9U1MN9 | 4G/5G MIPI LNA and LNA Bank
BGS12P2L6 | RF Switches
BGA9H1MN9 | 4G/5G MIPI LNA and LNA Bank
BGA824N6 | GNSS LNAs
BGS14WMA9 | RF Switches
BGM687U50 | 4G/5G MIPI LNA and LNA Bank
BGS12WN6 | RF Switches
BGS14M8U9 | RF Switches
BGA9V1MN9 | 4G/5G MIPI LNA and LNA Bank
BGA9U1MN9 | 4G/5G MIPI LNA and LNA Bank
BGS12P2L6 | RF Switches
BGA9H1MN9 | 4G/5G MIPI LNA and LNA Bank
BGA824N6 | GNSS LNAs
BGS14WMA9 | RF Switches
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DPDT Antenna Cross Switch
The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.
The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum thickness of 0.55 mm.
Summary of Features
- RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
- Ultra-low insertion loss and harmonics generation
- 0.1 to 6.0 GHz coverage
- High port-to-port-isolation
- No decoupling capacitors required if no DC applied on RF lines
- General Purpose Input-Output (GPIO) Interface
- Small form factor 1.1mm x 1.5mm
- No power supply blocking required
- High EMI robustness
- RoHS and WEEE compliant package
Potential Applications
Multi-mode LTE and WCDMA multi antenna applications
Applications
- Convenient, smart, and secure wearables supporting your health and well-being.
- Information & communication technologies
- Mobile devices and smartphones
- On-board charging (OBC) for electric vehicles
- Semiconductor solutions for home entertainment applications
Designers who used this product also designed with
- BGS12WN6 |
RF Switches
- BGS14M8U9 |
RF Switches
- BGA9V1MN9 |
4G/5G MIPI LNA and LNA Bank
- BGA9U1MN9 |
4G/5G MIPI LNA and LNA Bank
- BGS12P2L6 |
RF Switches
- BGA9H1MN9 |
4G/5G MIPI LNA and LNA Bank
- BGA824N6 |
GNSS LNAs
- BGS14WMA9 |
RF Switches
- BGM687U50 |
4G/5G MIPI LNA and LNA Bank
- BGS12WN6 |
RF Switches
- BGS14M8U9 |
RF Switches
- BGA9V1MN9 |
4G/5G MIPI LNA and LNA Bank
- BGA9U1MN9 |
4G/5G MIPI LNA and LNA Bank
- BGS12P2L6 |
RF Switches
- BGA9H1MN9 |
4G/5G MIPI LNA and LNA Bank
- BGA824N6 |
GNSS LNAs
- BGS14WMA9 |
RF Switches
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