Infineon Technologies AG RF - Antenna cross switches - BGSX22G5A10 BGSX22G5A10

Description
DPDT Antenna Cross Switch The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-ba ttery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum thickness of 0.55 mm. Summary of Features RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm Ultra-low insertion loss and harmonics generation 0.1 to 6.0 GHz coverage High port-to-port-isolati on No decoupling capacitors required if no DC applied on RF lines General Purpose Input-Output (GPIO) Interface Small form factor 1.1mm x 1.5mm No power supply blocking required High EMI robustness RoHS and WEEE compliant package Potential Applications Multi-mode LTE and WCDMA multi antenna applications Applications Convenient, smart, and secure wearables supporting your health and well-being. Information & communication technologies Mobile devices and smartphones On-board charging (OBC) for electric vehicles Semiconductor solutions for home entertainment applications Designers who used this product also designed with BGS12WN6 | RF Switches BGS14M8U9 | RF Switches BGA9V1MN9 | 4G/5G MIPI LNA and LNA Bank BGA9U1MN9 | 4G/5G MIPI LNA and LNA Bank BGS12P2L6 | RF Switches BGA9H1MN9 | 4G/5G MIPI LNA and LNA Bank BGA824N6 | GNSS LNAs BGS14WMA9 | RF Switches BGM687U50 | 4G/5G MIPI LNA and LNA Bank BGS12WN6 | RF Switches BGS14M8U9 | RF Switches BGA9V1MN9 | 4G/5G MIPI LNA and LNA Bank BGA9U1MN9 | 4G/5G MIPI LNA and LNA Bank BGS12P2L6 | RF Switches BGA9H1MN9 | 4G/5G MIPI LNA and LNA Bank BGA824N6 | GNSS LNAs BGS14WMA9 | RF Switches 1 2 3
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Suppliers

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Product
Description
Supplier Links
RF - Antenna cross switches - BGSX22G5A10 - BGSX22G5A10 - Infineon Technologies AG
Neubiberg, Germany
RF - Antenna cross switches - BGSX22G5A10
BGSX22G5A10
RF - Antenna cross switches - BGSX22G5A10 BGSX22G5A10
DPDT Antenna Cross Switch The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-ba ttery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum thickness of 0.55 mm. Summary of Features RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm Ultra-low insertion loss and harmonics generation 0.1 to 6.0 GHz coverage High port-to-port-isolati on No decoupling capacitors required if no DC applied on RF lines General Purpose Input-Output (GPIO) Interface Small form factor 1.1mm x 1.5mm No power supply blocking required High EMI robustness RoHS and WEEE compliant package Potential Applications Multi-mode LTE and WCDMA multi antenna applications Applications Convenient, smart, and secure wearables supporting your health and well-being. Information & communication technologies Mobile devices and smartphones On-board charging (OBC) for electric vehicles Semiconductor solutions for home entertainment applications Designers who used this product also designed with BGS12WN6 | RF Switches BGS14M8U9 | RF Switches BGA9V1MN9 | 4G/5G MIPI LNA and LNA Bank BGA9U1MN9 | 4G/5G MIPI LNA and LNA Bank BGS12P2L6 | RF Switches BGA9H1MN9 | 4G/5G MIPI LNA and LNA Bank BGA824N6 | GNSS LNAs BGS14WMA9 | RF Switches BGM687U50 | 4G/5G MIPI LNA and LNA Bank BGS12WN6 | RF Switches BGS14M8U9 | RF Switches BGA9V1MN9 | 4G/5G MIPI LNA and LNA Bank BGA9U1MN9 | 4G/5G MIPI LNA and LNA Bank BGS12P2L6 | RF Switches BGA9H1MN9 | 4G/5G MIPI LNA and LNA Bank BGA824N6 | GNSS LNAs BGS14WMA9 | RF Switches 1 2 3

DPDT Antenna Cross Switch

The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.

The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum thickness of 0.55 mm.


Summary of Features

  • RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
  • Ultra-low insertion loss and harmonics generation
  • 0.1 to 6.0 GHz coverage
  • High port-to-port-isolation
  • No decoupling capacitors required if no DC applied on RF lines
  • General Purpose Input-Output (GPIO) Interface
  • Small form factor 1.1mm x 1.5mm
  • No power supply blocking required
  • High EMI robustness
  • RoHS and WEEE compliant package

Potential Applications

Multi-mode LTE and WCDMA multi antenna applications


Applications

  • Convenient, smart, and secure wearables supporting your health and well-being.
  • Information & communication technologies
  • Mobile devices and smartphones
  • On-board charging (OBC) for electric vehicles
  • Semiconductor solutions for home entertainment applications

Designers who used this product also designed with


  • BGS12WN6 |
    RF Switches
  • BGS14M8U9 |
    RF Switches
  • BGA9V1MN9 |
    4G/5G MIPI LNA and LNA Bank
  • BGA9U1MN9 |
    4G/5G MIPI LNA and LNA Bank
  • BGS12P2L6 |
    RF Switches
  • BGA9H1MN9 |
    4G/5G MIPI LNA and LNA Bank
  • BGA824N6 |
    GNSS LNAs
  • BGS14WMA9 |
    RF Switches
  • BGM687U50 |
    4G/5G MIPI LNA and LNA Bank
  • BGS12WN6 |
    RF Switches
  • BGS14M8U9 |
    RF Switches
  • BGA9V1MN9 |
    4G/5G MIPI LNA and LNA Bank
  • BGA9U1MN9 |
    4G/5G MIPI LNA and LNA Bank
  • BGS12P2L6 |
    RF Switches
  • BGA9H1MN9 |
    4G/5G MIPI LNA and LNA Bank
  • BGA824N6 |
    GNSS LNAs
  • BGS14WMA9 |
    RF Switches

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Switches
Product Number BGSX22G5A10
Product Name RF - Antenna cross switches - BGSX22G5A10
Control Interface GPIO
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