Infineon Technologies AG Low Noise Amplifier MMICs - LTE / 3G LNAs BGAU1A10

Description
Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA, HSPA + and LTE also distant from the next base station and enables highest network efficiency by reduced transmission power and lowest bit error rates. The MMICs contain gain-switching, biasing and matching circuitry and thus allowing an easy implementation into the RF design. A wide variety of solutions from single to quad LNAs in very small standard IC packages optimized for the standard cellular frequency bands addresses the individual customer needs. Highly linear LNAs with bypass enable MIMO (Multiple-Input/Mult iple-Output) reception also on the main path with high power transmit signals. Infineon LNAs are used in many reference designs of chipset vendors but can also be found in customized solutions to compensate losses from the antenna to the transceiver in complex multi-band frond end implementations or long signal lines from distributed antennas - or to improve the own system performance beyond the standard. Customer benefits: Low NF, high linearity and low current consumption that enhances the signal receiving sensitivity and improves data transfer rate Have Pin-to-pin compatible families that products can easily be implemented in new project based on same PCB design Smallest package in the industry, increased system integration and reduce the product power consumption. No bond wires that avoid the interference caused by bond wires and further reduce the product dimension High linearity LNAs for use in transmit path (MIMO systems)
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Low Noise Amplifier MMICs - LTE / 3G LNAs - BGAU1A10 - Infineon Technologies AG
Neubiberg, Germany
Low Noise Amplifier MMICs - LTE / 3G LNAs
BGAU1A10
Low Noise Amplifier MMICs - LTE / 3G LNAs BGAU1A10
Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA, HSPA + and LTE also distant from the next base station and enables highest network efficiency by reduced transmission power and lowest bit error rates. The MMICs contain gain-switching, biasing and matching circuitry and thus allowing an easy implementation into the RF design. A wide variety of solutions from single to quad LNAs in very small standard IC packages optimized for the standard cellular frequency bands addresses the individual customer needs. Highly linear LNAs with bypass enable MIMO (Multiple-Input/Mult iple-Output) reception also on the main path with high power transmit signals. Infineon LNAs are used in many reference designs of chipset vendors but can also be found in customized solutions to compensate losses from the antenna to the transceiver in complex multi-band frond end implementations or long signal lines from distributed antennas - or to improve the own system performance beyond the standard. Customer benefits: Low NF, high linearity and low current consumption that enhances the signal receiving sensitivity and improves data transfer rate Have Pin-to-pin compatible families that products can easily be implemented in new project based on same PCB design Smallest package in the industry, increased system integration and reduce the product power consumption. No bond wires that avoid the interference caused by bond wires and further reduce the product dimension High linearity LNAs for use in transmit path (MIMO systems)

Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE

Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA, HSPA + and LTE also distant from the next base station and enables highest network efficiency by reduced transmission power and lowest bit error rates. The MMICs contain gain-switching, biasing and matching circuitry and thus allowing an easy implementation into the RF design. A wide variety of solutions from single to quad LNAs in very small standard IC packages optimized for the standard cellular frequency bands addresses the individual customer needs. Highly linear LNAs with bypass enable MIMO (Multiple-Input/Multiple-Output) reception also on the main path with high power transmit signals. Infineon LNAs are used in many reference designs of chipset vendors but can also be found in customized solutions to compensate losses from the antenna to the transceiver in complex multi-band frond end implementations or long signal lines from distributed antennas - or to improve the own system performance beyond the standard.

Customer benefits:

  • Low NF, high linearity and low current consumption that enhances the signal receiving sensitivity and improves data transfer rate
  • Have Pin-to-pin compatible families that products can easily be implemented in new project based on same PCB design
  • Smallest package in the industry, increased system integration and reduce the product power consumption.
  • No bond wires that avoid the interference caused by bond wires and further reduce the product dimension
  • High linearity LNAs for use in transmit path (MIMO systems)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Amplifiers
Product Number BGAU1A10
Product Name Low Noise Amplifier MMICs - LTE / 3G LNAs
Amplifier Type Low Noise Amplifier
Applications Mobile / Wireless Systems
RoHS Compliant RoHS
Frequency Range 5150 to 5925 MHz
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