Infineon Technologies AG Power - Gate Driver ICs - 2EDF5215F 2EDF5215F

Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation, makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving. Summary of Features 250 V high and low-side gate driver -250 V negative HS transient immunity 100 V/ns dV/dt robustness 5 A / 9 A source / sink capability +9 ns /-5 ns delay accuracy 4 ns max delay matching 1.2 V output clamping threshold in UVLO <2 μs fast start-up time Benefits High-side channel isolation Flexible: Independent channels robustness against ground noise Great signal synchronization Reliable for high switching frequencies Safe operation during system start-up Optimal operation in bootstrap supply Potential Applications Server and telecom DC-DC converter Synchronous rectification for SMPS Motor drives and power tools Low-speed electric vehicles (LSEV) Solar optimizers and micro-inverters