Hamamatsu Photonics Europe Si photodiodes S17348

Description
Si PIN photodiode for visible to infrared photometry The S17348 is a Si PIN photodiode developed for YAG lasers (1060 nm). High photosensitivity of 0.37 A/W at 1060 nm and high-speed response of 120 MHz are realized. Features - High sensitivity in infrared region: 0.37 A/W (λ=1060 nm) - High-speed response: fc=120 MHz (VR=100 V) - Low capacitance: Ct=6.5 pF (VR=100 V) - Large photosensitive area: φ3 mm - High reliability: TO-5 metal package
Request a Quote Datasheet
Description
Si PIN photodiode for visible to infrared photometry The S17348 is a Si PIN photodiode developed for YAG lasers (1060 nm). High photosensitivity of 0.37 A/W at 1060 nm and high-speed response of 120 MHz are realized. Features - High sensitivity in infrared region: 0.37 A/W (λ=1060 nm) - High-speed response: fc=120 MHz (VR=100 V) - Low capacitance: Ct=6.5 pF (VR=100 V) - Large photosensitive area: φ3 mm - High reliability: TO-5 metal package
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Si photodiodes - S17348 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S17348
Si photodiodes S17348
Si PIN photodiode for visible to infrared photometry The S17348 is a Si PIN photodiode developed for YAG lasers (1060 nm). High photosensitivity of 0.37 A/W at 1060 nm and high-speed response of 120 MHz are realized. Features - High sensitivity in infrared region: 0.37 A/W (λ=1060 nm) - High-speed response: fc=120 MHz (VR=100 V) - Low capacitance: Ct=6.5 pF (VR=100 V) - Large photosensitive area: φ3 mm - High reliability: TO-5 metal package

Si PIN photodiode for visible to infrared photometry

The S17348 is a Si PIN photodiode developed for YAG lasers (1060 nm). High photosensitivity of 0.37 A/W at 1060 nm and high-speed response of 120 MHz are realized.

Features
- High sensitivity in infrared region: 0.37 A/W (λ=1060 nm)
- High-speed response: fc=120 MHz (VR=100 V)
- Low capacitance: Ct=6.5 pF (VR=100 V)
- Large photosensitive area: φ3 mm
- High reliability: TO-5 metal package

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S17348
Product Name Si photodiodes
Photodiode Type PIN Photodiode
Photodiode Spectral Response Visible; IR
Spectral Response Range 360 to 1120 nm (3600 to 11200 Å)
Peak Sensitivity Wavelength 940 nm (9400 Å)
Photodiode Material Silicon
Unlock Full Specs
to access all available technical data

Similar Products

Light modulation photo IC - S7136-10 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
View Details
2 suppliers
Photodiode modules - C10439-11 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Spectral Response Range 500 to 1700 nm (5000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Active Area Diameter or Length 3 mm (0.1181 inch)
View Details
InGaAs photodiodes - G12180-230A - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Spectral Response Range 900 to 1650 nm (9000 to 16500 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
View Details
Si photodiode arrays with amplifier - S13885-128G - Hamamatsu Photonics Europe
Specs
Photodiode Spectral Response X-ray
Peak Sensitivity Wavelength 720 nm (7200 Å)
Photodiode Material Silicon
View Details