The S8552 is a vacuum UV monitoring silicon photodiode designed for excimer laser detection at 193 nm and 248 nm. It features a 10 × 10 mm photosensitive area and a windowless 16.5 × 15.0 mm ceramic package. The device operates with a reverse voltage up to 5 V, and its temperature range is -20 ℃ to +60 ℃ for operation and -55 ℃ to +80 ℃ for storage. Spectral response ranges from 190 to 1000 nm, with a photosensitivity of 45 to 60 mA/W at 193 nm. Dark current is ≤1.0 nA at VR=10 mV, and terminal capacitance is up to 4.0 nF at VR=0 V and f=10 kHz. Rise time is ≤9 µs. The device requires cleanroom handling due to its exposed photodiode chip.
Vacuum UV (VUV) monitoring photodiodes
S8552 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring.
Its design optimized for use in the VUV region provides improved stability in sensitivity for VUV light irradiation compared to previous products.
Features
- Improved reliability for excimer lasers (ArF: 193 nm, KrF: 248 nm)
- Large photosensitive area: 10 × 10 mm
- Windowless package: 16.5 × 15.0 mm ceramic package
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S8552 |
| Product Name | Si photodiodes |
| Spectral Response Range | 190 to 1000 nm (1900 to 10000 Å) |
| Photodiode Material | Silicon |
| Active Area Diameter or Length | 10 mm (0.3937 inch) |
| Active Area Height | 10 mm (0.3937 inch) |
