Broadcom Inc. 1.3 µm DFB Chip in TO Can for Uncooled Applications (CWDM) TO293Bxxx

Description
The Avago TO293Bxxx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1270 to 1450nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.
Description
The Avago TO293Bxxx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1270 to 1450nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

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1.3 µm DFB Chip in TO Can for Uncooled Applications (CWDM) - TO293Bxxx - Broadcom Inc.
San Jose, CA, USA
1.3 µm DFB Chip in TO Can for Uncooled Applications (CWDM)
TO293Bxxx
1.3 µm DFB Chip in TO Can for Uncooled Applications (CWDM) TO293Bxxx
The Avago TO293Bxxx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1270 to 1450nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

The Avago TO293Bxxx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1270 to 1450nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap.

The laser design is a capped mesa buried heterostructure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

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Technical Specifications

  Broadcom Inc.
Product Category Fiber Optic Receivers
Product Number TO293Bxxx
Product Name 1.3 µm DFB Chip in TO Can for Uncooled Applications (CWDM)
Packaging Type TO-56
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