Richardson RFPD Silicon Carbide MOSFET Modules CAS530M12BM3

Description
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS
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Description
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAS530M12BM3 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAS530M12BM3
Silicon Carbide MOSFET Modules CAS530M12BM3
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS

1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features

  • Industry standard 62mm Footprint
  • Ultra Low Loss, High-Frequency Operation
  • Zero Reverse Recovery from Diodes
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Copper Baseplate and Aluminum Nitride Insulator

System Benefits

  • 62mm Form Factor Enables System Retrofit
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC

Applications

  • Induction Heating
  • Motor Drives
  • Renewables
  • Railway Auxiliary and Traction
  • EV Fast Charging
  • UPS and SMPS
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CAS530M12BM3
Product Name Silicon Carbide MOSFET Modules
Package Type 62mm
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