The ALD110908APAL is a dual N-channel enhancement mode MOSFET array fabricated using EPAD® CMOS technology for precision analog applications. It is housed in an 8-pin plastic DIP package with dimensions of 9.40mm to 11.68mm in length, 5.59mm to 7.11mm in width, and 3.81mm to 5.08mm in height. Each device features a gate threshold voltage of 0.80V with a match of ±2mV between pairs, a gate leakage current of 3pA at 25°C, and a DC current gain exceeding 10^8. The MOSFETs operate with a drain-source voltage up to 10.6V, a power dissipation of 500mW, and an operating temperature range of 0°C to 70°C. They exhibit tight matched characteristics, low input capacitance (2.5pF), and fast switching times of 10ns. The part is RoHS compliant and designed for low-voltage, low-power applications requiring precision current mirrors, differential amplifiers, and analog switching.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110908APAL | 1014-1038-ND | ALD110908APAL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
