onsemi TRANSISTORS - Transistors (BJT) - Single - MJE350STU MJE350STU

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - MJE350STU - 023377-MJE350STU - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors (BJT) - Single - MJE350STU
023377-MJE350STU
TRANSISTORS - Transistors (BJT) - Single - MJE350STU 023377-MJE350STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 023377-MJE350STU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 30 @ 50mA, 10V Maximum Power Dissipation: 20W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial Quantity per package: 1,920

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 023377-MJE350STU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 30 @ 50mA, 10V
Maximum Power Dissipation: 20W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 1,920

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MJE350STU
Bipolar Transistors - BJT MJE350STU
Bipolar Transistors - BJT PNP Epitaxial Sil

Bipolar Transistors - BJT PNP Epitaxial Sil

Supplier's Site Datasheet
 - 8062902 - RS Components, Ltd.
Corby, Northants, United Kingdom
Transistor, Fairchild, MJE350STU - Discrete Semiconductors - Bipolar Transistors

Transistor, Fairchild, MJE350STU - Discrete Semiconductors - Bipolar Transistors

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJE350STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJE350STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJE350STU
TRANS PNP 300V 0.5A TO126-3

TRANS PNP 300V 0.5A TO126-3

Supplier's Site
 - MJE350STU - Rochester Electronics
Newburyport, MA, United States
MJE350 - Power Bipolar Transistor, 0.5A, 300V, PNP, TO-126, 3 Pin

MJE350 - Power Bipolar Transistor, 0.5A, 300V, PNP, TO-126, 3 Pin

Supplier's Site Datasheet
Single Bipolar Transistors - MJE350STU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJE350STU-ND
Single Bipolar Transistors MJE350STU-ND
Bipolar (BJT) Transistor PNP 300V 500mA 20W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 300V 500mA 20W Through Hole TO-126-3

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Rochester Electronics DigiKey
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Power MOSFET Transistors
Product Number 023377-MJE350STU MJE350STU 8062902 MJE350STU MJE350STU MJE350STU-ND
Product Name TRANSISTORS - Transistors (BJT) - Single - MJE350STU Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors
Polarity PNP; PNP PNP PNP
Package Type SOT3; TO-126 TO-126 TO-126 TO-225AA, TO-126-3
IC(max) 500 milliamps 500 milliamps
VCEO 300 volts 300 volts
Unlock Full Specs
to access all available technical data

Similar Products

CSD17309Q3 30V N Channel NexFET? Power MOSFET - CSD17309Q3 - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 30 volts
rDS(on) 0.0063 ohms
View Details
9 suppliers
N-Channel Power MOSFET - BSZ065N03LS - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0065 ohms
View Details
4 suppliers
600V IGBT Intelligent Power Module (IPM) - BM64378S-VA - ROHM Semiconductor GmbH
Specs
TJ -40 to 125 C (-40 to 257 F)
Package Type HSDIP25
Packing Method Tube
View Details
Automotive Power MOSFETs - Super J  MOS S2FD Model: FMY60N133S2FDA - Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.1330 ohms
IDSS 22800 milliamps
View Details