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Infineon Technologies AG N-Channel Power MOSFET BSZ065N03LS

Description
OptiMOS™ 30V in S308 package Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6). Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Applications Consumer electronics Industrial automation Semiconductor solutions for home entertainment applications Designers who used this product also designed with BSZ520N15NS3 G | N-Channel Power MOSFET BSZ0901NSI | N-Channel Power MOSFET BSC0902NSI | N-Channel Power MOSFET BSL202SN | Small Signal/Small Power MOSFET BSC0904NSI | N-Channel Power MOSFET BSS214NW | Small Signal/Small Power MOSFET BSC026NE2LS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 2EDN7534B | Gate Driver ICs IRS21271S | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7550B | Gate Driver ICs 2ED2106S06F | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs BSZ520N15NS3 G | N-Channel Power MOSFET BSZ0901NSI | N-Channel Power MOSFET BSC0902NSI | N-Channel Power MOSFET BSL202SN | Small Signal/Small Power MOSFET BSC0904NSI | N-Channel Power MOSFET BSS214NW | Small Signal/Small Power MOSFET BSC026NE2LS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSZ065N03LS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSZ065N03LS
N-Channel Power MOSFET BSZ065N03LS
OptiMOS™ 30V in S308 package Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6). Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Applications Consumer electronics Industrial automation Semiconductor solutions for home entertainment applications Designers who used this product also designed with BSZ520N15NS3 G | N-Channel Power MOSFET BSZ0901NSI | N-Channel Power MOSFET BSC0902NSI | N-Channel Power MOSFET BSL202SN | Small Signal/Small Power MOSFET BSC0904NSI | N-Channel Power MOSFET BSS214NW | Small Signal/Small Power MOSFET BSC026NE2LS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 2EDN7534B | Gate Driver ICs IRS21271S | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7550B | Gate Driver ICs 2ED2106S06F | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs BSZ520N15NS3 G | N-Channel Power MOSFET BSZ0901NSI | N-Channel Power MOSFET BSC0902NSI | N-Channel Power MOSFET BSL202SN | Small Signal/Small Power MOSFET BSC0904NSI | N-Channel Power MOSFET BSS214NW | Small Signal/Small Power MOSFET BSC026NE2LS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1 2 3 4

OptiMOS™ 30V in S308 package

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6).


Summary of Features

  • Ultra low gate and output charge
  • Lowest on-state resistance in small footprint packages
  • Easy to design in

Benefits

  • Increased battery lifetime
  • Improved EMI behavior making external snubber networks obsolete
  • Saving costs
  • Saving space
  • Reducing power losses

Potential Applications

  • Onboard charger
  • Notebook
  • Mainboard
  • DC-DC
  • VRD/VRM
  • Motor control
  • LED

Applications

  • Consumer electronics
  • Industrial automation
  • Semiconductor solutions for home entertainment applications

Designers who used this product also designed with


  • BSZ520N15NS3 G |
    N-Channel Power MOSFET
  • BSZ0901NSI |
    N-Channel Power MOSFET
  • BSC0902NSI |
    N-Channel Power MOSFET
  • BSL202SN |
    Small Signal/Small Power MOSFET
  • BSC0904NSI |
    N-Channel Power MOSFET
  • BSS214NW |
    Small Signal/Small Power MOSFET
  • BSC026NE2LS5 |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 2EDN7534B |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7550B |
    Gate Driver ICs
  • 2ED2106S06F |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • BSZ520N15NS3 G |
    N-Channel Power MOSFET
  • BSZ0901NSI |
    N-Channel Power MOSFET
  • BSC0902NSI |
    N-Channel Power MOSFET
  • BSL202SN |
    Small Signal/Small Power MOSFET
  • BSC0904NSI |
    N-Channel Power MOSFET
  • BSS214NW |
    Small Signal/Small Power MOSFET
  • BSC026NE2LS5 |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs

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4

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

Supplier's Site Datasheet
 - 9064331 - RS Components, Ltd.
Corby, Northants, United Kingdom
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on) Channel Type = N Maximum Continuous Drain Current = 40 A Maximum Drain Source Voltage = 30 V Maximum Drain Source Resistance = 8.6 mOhms Maximum Gate Source Voltage = -20 V, +20 V Package Type = TDSON Mounting Type = Surface Mount Pin Count = 8 Transistor Configuration = Single Channel Mode = Enhancement

OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 40 A
Maximum Drain Source Voltage = 30 V
Maximum Drain Source Resistance = 8.6 mOhms
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TDSON
Mounting Type = Surface Mount
Pin Count = 8
Transistor Configuration = Single
Channel Mode = Enhancement

Supplier's Site
 - 9064331P - RS Components, Ltd.
Corby, Northants, United Kingdom
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on) Channel Type = N Maximum Continuous Drain Current = 40 A Maximum Drain Source Voltage = 30 V Maximum Drain Source Resistance = 8.6 mOhms Maximum Gate Source Voltage = -20 V, +20 V Package Type = TDSON Mounting Type = Surface Mount Pin Count = 8 Transistor Configuration = Single Channel Mode = Enhancement Delivery on production packaging - Reel. This product is non-returnable.

OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 40 A
Maximum Drain Source Voltage = 30 V
Maximum Drain Source Resistance = 8.6 mOhms
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TDSON
Mounting Type = Surface Mount
Pin Count = 8
Transistor Configuration = Single
Channel Mode = Enhancement
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ065N03LS - 101536-BSZ065N03LS - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ065N03LS
101536-BSZ065N03LS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ065N03LS 101536-BSZ065N03LS
Manufacturer: Infineon Technologies Win Source Part Number: 101536-BSZ065N03LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 26W (Tc) Family Name: BSZ065N03LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TSDSON-8-FL Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 670pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): TSM060N03PQ33 RGG; Si7114ADN-T1-GE3; uPA2820T1S-E2-AT; NTTFS4C08NTWG; Introduction Date: March 21, 2011 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 101536-BSZ065N03LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Family Name: BSZ065N03LS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TSDSON-8-FL
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 670pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TSM060N03PQ33 RGG; Si7114ADN-T1-GE3; uPA2820T1S-E2-AT; NTTFS4C08NTWG;
Introduction Date: March 21, 2011
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG VAST STOCK CO., LIMITED RS Components, Ltd. Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSZ065N03LS BSZ065N03LS 9064331 101536-BSZ065N03LS
Product Name N-Channel Power MOSFET MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ065N03LS
Polarity N-Channel; N N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0065 ohms 0.0086 ohms
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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