onsemi TRANSISTORS - Transistors (BJT) - Arrays - NST45010MW6T1G NST45010MW6T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 025735-NST45010MW6T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Matched Pair Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 220 @ 2mA, 5V Maximum Power Dissipation: 380mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - NST45010MW6T1G - 025735-NST45010MW6T1G - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors (BJT) - Arrays - NST45010MW6T1G
025735-NST45010MW6T1G
TRANSISTORS - Transistors (BJT) - Arrays - NST45010MW6T1G 025735-NST45010MW6T1G
Manufacturer: ON Semiconductor Win Source Part Number: 025735-NST45010MW6T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Matched Pair Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 220 @ 2mA, 5V Maximum Power Dissipation: 380mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 025735-NST45010MW6T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 PNP (Dual) Matched Pair
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 650mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 220 @ 2mA, 5V
Maximum Power Dissipation: 380mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NST45010MW6T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NST45010MW6T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NST45010MW6T1G
TRANS 2PNP 45V 0.1A SC88/SC70-6

TRANS 2PNP 45V 0.1A SC88/SC70-6

Supplier's Site
Discrete Semiconductor - NST45010MW6T1G - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
NST45010MW6T1G
Discrete Semiconductor NST45010MW6T1G
TRANS 2PNP 45V 0.1A SC88/SC70-6

TRANS 2PNP 45V 0.1A SC88/SC70-6

Supplier's Site Datasheet
 - NST45010MW6T1G - Rochester Electronics
Newburyport, MA, United States
NST45010 - Small Signal Bipolar Transistor, 0.1A, 45V, 2-Element, PNP

NST45010 - Small Signal Bipolar Transistor, 0.1A, 45V, 2-Element, PNP

Supplier's Site Datasheet
 - 8021670 - RS Components, Ltd.
Corby, Northants, United Kingdom
Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE). Transistor Type = PNP Maximum DC Collector Current = 100 mA Maximum Collector Emitter Voltage = 45 V Package Type = SOT-363 (SC-88) Mounting Type = Surface Mount Maximum Power Dissipation = 380 W Minimum DC Current Gain = 0.9 Transistor Configuration = Isolated Maximum Collector Base Voltage = -50 V Maximum Emitter Base Voltage = -5 V

Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE).
Transistor Type = PNP
Maximum DC Collector Current = 100 mA
Maximum Collector Emitter Voltage = 45 V
Package Type = SOT-363 (SC-88)
Mounting Type = Surface Mount
Maximum Power Dissipation = 380 W
Minimum DC Current Gain = 0.9
Transistor Configuration = Isolated
Maximum Collector Base Voltage = -50 V
Maximum Emitter Base Voltage = -5 V

Supplier's Site
 - 8021670P - RS Components, Ltd.
Corby, Northants, United Kingdom
Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE). Transistor Type = PNP Maximum DC Collector Current = 100 mA Maximum Collector Emitter Voltage = 45 V Package Type = SOT-363 (SC-88) Mounting Type = Surface Mount Maximum Power Dissipation = 380 W Minimum DC Current Gain = 0.9 Transistor Configuration = Isolated Maximum Collector Base Voltage = -50 V Maximum Emitter Base Voltage = -5 V Delivery on production packaging - Reel. This product is non-returnable.

Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE).
Transistor Type = PNP
Maximum DC Collector Current = 100 mA
Maximum Collector Emitter Voltage = 45 V
Package Type = SOT-363 (SC-88)
Mounting Type = Surface Mount
Maximum Power Dissipation = 380 W
Minimum DC Current Gain = 0.9
Transistor Configuration = Isolated
Maximum Collector Base Voltage = -50 V
Maximum Emitter Base Voltage = -5 V
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NST45010MW6T1G
Bipolar Transistors - BJT NST45010MW6T1G
Bipolar Transistors - BJT DUAL MATCHD XSTR 45V PNP

Bipolar Transistors - BJT DUAL MATCHD XSTR 45V PNP

Supplier's Site Datasheet
Bipolar Transistor Arrays - NST45010MW6T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NST45010MW6T1GOSDKR-ND
Bipolar Transistor Arrays NST45010MW6T1GOSDKR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Supplier's Site Datasheet
Bipolar Transistor Arrays - NST45010MW6T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NST45010MW6T1GOSTR-ND
Bipolar Transistor Arrays NST45010MW6T1GOSTR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Supplier's Site Datasheet
Bipolar Transistor Arrays - NST45010MW6T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NST45010MW6T1GOSCT-ND
Bipolar Transistor Arrays NST45010MW6T1GOSCT-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Supplier's Site Datasheet
Trans, Dual Pnp, Aec-Q101, -45V, Sot363; Transistor Polarity Onsemi - 81Y7026 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Pnp, Aec-Q101, -45V, Sot363; Transistor Polarity Onsemi
81Y7026
Trans, Dual Pnp, Aec-Q101, -45V, Sot363; Transistor Polarity Onsemi 81Y7026
TRANS, DUAL PNP, AEC-Q101, -45V, SOT363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-45V; DC Collector Current:-100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:220hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

TRANS, DUAL PNP, AEC-Q101, -45V, SOT363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-45V; DC Collector Current:-100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:220hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited LIXINC Electronics Co., Limited Rochester Electronics RS Components, Ltd. VAST STOCK CO., LIMITED DigiKey Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors
Product Number 025735-NST45010MW6T1G NST45010MW6T1G NST45010MW6T1G NST45010MW6T1G 8021670 NST45010MW6T1G NST45010MW6T1GOSDKR-ND 81Y7026
Product Name TRANSISTORS - Transistors (BJT) - Arrays - NST45010MW6T1G Discrete Semiconductor Products - Transistors - Bipolar (BJT) Discrete Semiconductor Bipolar Transistors - BJT Bipolar Transistor Arrays Trans, Dual Pnp, Aec-Q101, -45V, Sot363; Transistor Polarity Onsemi
Polarity PNP; 2 PNP (Dual) Matched Pair PNP PNP PNP PNP PNP
Package Type SOT3; SC-88/SC70-6/SOT-363 SOT3; 6-TSSOP, SC-88, SOT-363 SC-88/SC70-6/SOT-363 6 LEAD SOT-363 (SC-88) 6-TSSOP, SC-88, SOT-363 TO-3
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Tape & Reel (TR)Cut Tape (CT)Digi-Reel庐 Tape Reel; Tape & Reel
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 45 volts 45 volts 45 volts
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