Youtai Semiconductor Co., Ltd Single FETs, MOSFETs FDP036N10A

The FDP036N10A is a 100V N-channel MOSFET designed for high-power switching applications with low on-state resistance and fast switching. It is packaged in a TO-220 case measuring 10.3mm maximum length, 16.2mm maximum width, and 5.8mm maximum height. The device handles a continuous drain current of 120A limited by the package and up to 214A silicon-limited at 25°C, with a pulsed drain current of 856A. It has a maximum Rₓₓ(ON) of 3.6mΩ at Vₒₓ=10V and a total gate charge of 89nC typical. Thermal resistance is 0.45°C/W junction-to-case and 62.5°C/W junction-to-ambient. The operating and storage temperature range is -55°C to 175°C. The product complies with RoHS standards.