Youtai Semiconductor Co., Ltd Single FETs, MOSFETs 4N65F

The UMW 4N65F is a 650V N-channel MOSFET in a TO-220F package, designed for switching applications. It has a continuous drain current rating of 4 A at 25°C and 2.5 A at 100°C, with a maximum drain-source on-resistance of 2.7 Ω at V_GS = 10 V. The device supports a pulsed drain current of 16 A and dissipates up to 32 W in the TO-220F package. Its junction-to-case thermal resistance is 3.79 °C/W, and junction-to-ambient is 62.5 °C/W. The device meets typical industrial standards for voltage and current ratings, with a gate-source voltage limit of ±30 V and a maximum junction temperature of 150 °C. The package dimensions are specified for TO-220F, with lead spacing and body size optimized for surface mount or through-hole mounting. Ordering information confirms this variant is available in tape and box packaging with a unit quantity of 1000.