Yageo USA Single FETs, MOSFETs XP4P016H

The XP4P016H is a P-channel enhancement mode power MOSFET designed for efficient switching in high-current power applications. It is packaged in a TO-252 case measuring 6.50 mm in length, 5.70 mm in width, and 2.40 mm in height. The device has a drain-source breakdown voltage of -40 V, a continuous drain current of -45 A at 25°C, and a maximum on-resistance of 16 mΩ at -10 V gate-source voltage. It supports a pulsed drain current of -180 A and dissipates up to 52 W at 25°C. The thermal resistance from junction to case is 2.4°C/W, and junction temperature ranges from -55°C to 150°C. The part is RoHS compliant and halogen-free, and meets AEC-Q200 qualification standards.