WINSOK Semiconductor Transistors WSD60P06DN56

Description
60V 60A 20mΩ@10V,18A 56W 2.5V@250uA 1 Piece P-Channel DFN-8 MOSFETs ROHS
  • Transistors - WSD60P06DN56 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 60A 20mΩ@10V,18A 56W 2.5V@250uA 1 Piece P-Channel DFN-8 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - WSD60P06DN56 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
WSD60P06DN56
Transistors WSD60P06DN56
60V 60A 20mΩ@10V,18A 56W 2.5V@250uA 1 Piece P-Channel DFN-8 MOSFETs ROHS

60V 60A 20mΩ@10V,18A 56W 2.5V@250uA 1 Piece P-Channel DFN-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number WSD60P06DN56
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 436324 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBI40N120
Specs
Transistor Type IGBT
View Details
60 V, 1 A NPN medium power transistors - BC55-16PA-QX - Nexperia B.V.
Nexperia B.V.
60 V, 1 A NPN medium power transistors
BC55-16PA-QX
Specs
Package Type SOT1061 SOT1061
View Details
2 suppliers
Single FETs, MOSFETs - 448-AIMBG75R050M2HXTMA1TR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMBG75R050M2HXTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details