Winbond Electronics Corporation America Memory W947D2HBJX5E TR

Description
IC DRAM 128MBIT PARALLEL 90VFBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 90VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 128MBIT PARALLEL 90VFBGA

IC DRAM 128MBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Memory - W947D2HBJX5E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 90-VFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number W947D2HBJX5E TR W947D2HBJX5E TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns
Density 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 448-S80KS5123GABHI020-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category PSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits
View Details
4 suppliers