Winbond Electronics Corporation America Memory W947D2HBJX5E TR

Description
IC DRAM 128MBIT PARALLEL 90VFBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 90VFBGA
Datasheet

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Product
Description
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IC DRAM 128MBIT PARALLEL 90VFBGA

IC DRAM 128MBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Memory - W947D2HBJX5E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 90-VFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number W947D2HBJX5E TR W947D2HBJX5E TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns
Density 128000 kbits 128000 kbits
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