Rochester Electronics Memory 27S185DM/B

Description
Memory IC
  • Memory - 27S185DM/B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - 27S185DM/B - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 27S185DM/B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
27S185DM/B
Memory 27S185DM/B
Memory IC

Memory IC

Buy Now
Memory - 27S185DM/B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
27S185DM/B
Memory 27S185DM/B
OTP ROM, 2KX4, 55NS, TTL, CDIP18

OTP ROM, 2KX4, 55NS, TTL, CDIP18

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number 27S185DM/B 27S185DM/B
Product Name Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71016S15YGI - Lingto Electronic Limited
Rochester Electronics
Memory
71016S15YGI
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Memory
MT5C1008
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Integrated Circuits (ICs) - Memory - Memory - JBP28L42MJ - Shenzhen Shengyu Electronics Technology Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
JBP28L42MJ
Specs
Memory Category PROM
Density 512 kbits
Supply Voltage 20-CDIP (0.300, 7.62mm)
View Details
2 suppliers
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821501VXF - 5962R1821501VXF - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821501VXF
5962R1821501VXF
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 2 k
View Details