WeEn Semiconductors Single Bipolar Transistors BUJ403A/DG,127

Silicon diffused npn power switching transistor in TO-220AB package designed for high-frequency electronic lighting ballast, converter, inverter, and switching regulator applications. It has a collector-emitter voltage rating of 550 V, a continuous collector current of 6 A, a peak collector current of 10 A, and a total power dissipation of 100 W at 25 °C. The collector-emitter saturation voltage is up to 1.0 V at a collector current of 2 A and base current of 0.4 A. The junction-to-mounting-base thermal resistance is 1.25 K/W, and the junction temperature rating is 150 °C. The device meets the Absolute Maximum Rating System (IEC 134).