Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP28N15-52 SUP28N15-52

Description
Manufacturer: Vishay Win Source Part Number: 212453-SUP28N15-52 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 52 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 212453-SUP28N15-52 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 52 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP28N15-52 - 212453-SUP28N15-52 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP28N15-52
212453-SUP28N15-52
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP28N15-52 212453-SUP28N15-52
Manufacturer: Vishay Win Source Part Number: 212453-SUP28N15-52 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 52 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 212453-SUP28N15-52
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1725pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 52 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212453-SUP28N15-52
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP28N15-52
Polarity N-Channel; N-Channel
V(BR)DSS 150 volts
PD 3750 to 120000 milliwatts
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