Win Source Part Number: 965328-SUM60020E-GE3
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUM60020E-GE3CT,SUM6
Base Product Number: SUM60020
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 80V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 80V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 80V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
MOSFET N-CH 80V 150A TO263
N-Channel 80-V (D-S) MOSFET D2PAK (TO-26
N-Channel 80-V (D-S) MOSFET D2PAK (TO-26
N-Channel 80-V (D-S) MOSFET D2PAK (TO-26
MOSFET N-Channel 80 V (D-S) MOSFET
MOSFET N-CH 80V 150A TO263
MOSFET, N-CH, 80V, 150A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:150A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 965328-SUM60020E-GE3 | SUM60020E-GE3TR-ND | SUM60020E-GE3 | 1885107P | 1884927 | SUM60020E-GE3 | SUM60020E-GE3 | 10AH1177 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 150A, 175Deg C, 375W; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 375000 milliwatts | 375000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263 | TO-263; To-263 | 10680 pF @ 40 V | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
