Win Source Part Number: 965328-SUM60020E-GE3
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUM60020E-GE3CT,SUM6
Base Product Number: SUM60020
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 80-V (D-S) MOSFET D2PAK (TO-26
N-Channel 80-V (D-S) MOSFET D2PAK (TO-26
N-Channel 80-V (D-S) MOSFET D2PAK (TO-26
MOSFET N-CH 80V 150A TO263
N-Channel 80V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 80V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 80V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Power Field-Effect Transistor, Product overview: SUM60020E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM60020E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 150A TO263
MOSFET N-Channel 80 V (D-S) MOSFET
MOSFET, N-CH, 80V, 150A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:150A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 965328-SUM60020E-GE3 | 1885107P | 1884927 | SUM60020E-GE3 | SUM60020E-GE3TR-ND | 278-SUM60020E-GE3 | SUM60020E-GE3 | SUM60020E-GE3 | 10AH1177 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 80V, 150A, 175Deg C, 375W; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 375000 milliwatts | 375000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| Package Type | TO-263; SOT3 | TO-263; TO-263 | TO-263; To-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | 10680 pF @ 40 V | TO-3 | ||
| MOSFET Operating Mode | Enhancement |
