MOSFET N-CH 75V 110A TO263 Product overview: SUM110N08-07P-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM110N08-07P-E3
Manufacturer: Vishay
Win Source Part Number: 140352-SUM110N08-07P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 4250pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
MOSFET N-CH 75V 110A TO263
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SUM110N08-07P-E3 | 140352-SUM110N08-07P-E3 | SUM110N08-07P-E3 |
| Product Name | 75V 110A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N08-07P-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3750 milliwatts | 3750 to 208300 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tape & Reel (TR) | TO-263; SOT3; TO-263 (D2Pak) | 4250 pF @ 30 V |