Manufacturer: Vishay
Win Source Part Number: 897282-SQS850EN-T1_G
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQS850
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQS850EN-T1_GE3TR, SQS850EN-T1_GE3DKR, SQS850EN-T1_GE3CT, SQS850EN-T1_GE3-ND
Power Field-Effect Transistor, 12A I(D), 60V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8 Product overview: SQS850EN-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 60V, 0.0215ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 60V, 0.0215ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS850EN-T1_GE3 can be used for catalog matching and distributor lookup.
N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 60V 12A PPAK1212-8
MOSFET N-Channel 60V AEC-Q101 Qualified
MOSFET, N-CH, 60V, 12A, POWERPAK 1212 ROHS COMPLIANT: YES
MOSFET N-CH 60V 12A PPAK1212-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 897282-SQS850EN-T1_GE3 | 278-SQS850EN-T1_GE3 | SQS850EN-T1_GE3TR-ND | SQS850EN-T1_GE3 | SQS850EN-T1_GE3 | 57AJ0722 | SQS850EN-T1_GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQS850EN-T1_GE3 | N-Channel 12A 60V 0.0215ohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 12A, Powerpak 1212 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | TO-3 | PowerPAKR 1212-8 | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
