Vishay Intertechnology, Inc. Single FETs, MOSFETs SQS144ENW-T1_GE3

Automotive N-channel 40 V MOSFET in a PowerPAK 1212-8SLW package with a 0.75 mm profile, featuring wettable flank terminals and a maximum operating junction temperature of 175 °C. The device has a drain-source on-state resistance of 0.0040 Ω at V_GS = 10 V and a continuous drain current of 92 A at T_C = 25 °C. It meets AEC-Q200 standards and is rated for a junction-to-case thermal resistance of 2.5 °C/W and a junction-to-ambient thermal resistance of 81 °C/W on a 1 sq. in. FR4 PCB. The gate-source threshold voltage ranges from 2.0 V to 3.5 V, and the total gate charge is 27 nC to 41 nC.