Vishay Precision Group Single FETs, MOSFETs SQM60N06-15_GE3

N-Channel 60V 56A (Tc) 107W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 60V 56A (Tc) 107W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 60V 56A (Tc) 107W (Tc) Surface Mount TO-263 (D²Pak)

MOSFET N-CH 60V 56A TO263

MOSFET N-CH 60V 56A TO263 Product overview: SQM60N06-15_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 56A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 56A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM60N06-15_GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1101749-SQM60N06-15_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 107W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 2480pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance