Trans MOSFET N-CH 80V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO Product overview: SQJA80EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 80V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 80V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJA80EP-T1_GE3 can be used for catalog matching and distributor lookup.
N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1277795-SQJA80EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQJA80EP-T1_GE3TR,SQ
Base Product Number: SQJA80
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 80V 60A PPAK SO-8
MOSFET N-CH 80V 60A PPAK SO-8
MOSFET N-Channel 80V PowerPAK SO-8L
MOSFET N-CH 80V 60A POWERPAKSO-8
MOSFET, N-CH, 80V, 60A, POWERPAK SO ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJA80EP-T1_GE3 | SQJA80EP-T1_GE3CT-ND | 1277795-SQJA80EP-T1_GE3 | SQJA80EP-T1_GE3 | SQJA80EP-T1_GE3 | SQJA80EP-T1_GE3 | 880-SQJA80EP-T1_GE3 | 57AJ0698 |
| Product Name | Automotive 80V 60A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 80V 60A POWERPAKSO-8 | Mosfet, N-Ch, 80V, 60A, Powerpak So Rohs Compliant Vishay |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | |||||
| PD | 68000 milliwatts | 68000 milliwatts | 68000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel |
