MOSFET P-CH 80V 32A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 851161-SQJ479EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Features: 80 V
Package: Reel - TR
Family Name: SQJ479
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ479EP-T1_GE3DKR, SQJ479EP-T1_GE3TR, SQJ479EP-T1_GE3CT
4-Terminal Single MOSFET Power Transistor Product overview: SQJ479EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ479EP-T1_GE3 can be used for catalog matching and distributor lookup.
P-Channel 80V 32A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 80V 32A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 80V 32A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
MOSFET P-CH 80V 32A PPAK SO-8
MOSFET, P-CH, 80V, 32A, 175DEG C, 68W ROHS COMPLIANT: YES
MOSFET P Ch -80Vds 20Vgs AEC-Q101 Qualified
80V 32A 68W 33mΩ@10V,10A 2.5V@250uA P Channel PowerPAK-SO-8 MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJ479EP-T1_GE3 | 851161-SQJ479EP-T1_GE3 | 278-SQJ479EP-T1_GE3 | SQJ479EP-T1_GE3TR-ND | SQJ479EP-T1_GE3 | 75AH9222 | SQJ479EP-T1_GE3 | SQJ479EP-T1_GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ479EP-T1_GE3 | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 80V, 32A, 175Deg C, 68W Rohs Compliant Vishay | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| IDSS | 32000 milliamps | |||||||
| PD | 68000 milliwatts | 68000 milliwatts |
