Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD50N03-06P-GE3 SQD50N03-06P-GE3

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 988882-SQD50N03-06P-GE3
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Number of Elements: 1
Input Capacitance: 4.03 nF
Power Dissipation: 83 W
Number of Pins: 3
Rise Time: 12 ns
Fall Time: 10 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: DPAK
Popularity: Low
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
REACH SVHC: Unknown
Element Configuration: Single
Max Power Dissipation: 83 W
Turn-On Delay Time: 10 ns
Continuous Drain Current (ID): 50 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 30 ns
Drain to Source Resistance: 6 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 6 mΩ
Threshold Voltage: 2 V

TRANSISTOR 50 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Product overview: SQD50N03-06P-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50 A, 30 V, 0.0085 ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50 A, 30 V, 0.0085 ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SQD50N03-06P-GE3 can be used for catalog matching and distributor lookup.