Vishay Intertechnology, Inc. 60V 5.5A MOSFET Transistor SQ3427EEV-T1-GE3

MOSFET P-CH 60V 5.5A 6TSOP Product overview: SQ3427EEV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ3427EEV-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel 60V 5.5A (Tc) 5W (Tc) Surface Mount 6-TSOP

MOSFET P-CH 60V 5.5A 6TSOP

Manufacturer: Vishay
Win Source Part Number: 1101704-SQ3427EEV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 5W (Tc)
Family Name: SQ3427EEV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1125pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 82 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): SQ3427EEV-T1_GE3; SQ3427AEEV-T1_GE3; SQ3427EV-T1_GE3;
Introduction Date: September 03, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited