Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1912EEH-T1-GE3 SQ1912EEH-T1-GE3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1095773-SQ1912EEH-T1 -GE3 Packaging: Tape & Reel Mounting: SMD (SMT) Number of Elements: 2 Power Dissipation: 1.5 W Number of Pins: 6 Rise Time: 51 ns Fall Time: 142 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SC Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 34 ns Continuous Drain Current (ID): 800 mA Turn-Off Delay Time: 431 ns Gate to Source Voltage (Vgs): 12 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1095773-SQ1912EEH-T1 -GE3 Packaging: Tape & Reel Mounting: SMD (SMT) Number of Elements: 2 Power Dissipation: 1.5 W Number of Pins: 6 Rise Time: 51 ns Fall Time: 142 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SC Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 34 ns Continuous Drain Current (ID): 800 mA Turn-Off Delay Time: 431 ns Gate to Source Voltage (Vgs): 12 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1912EEH-T1-GE3 - 1095773-SQ1912EEH-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1912EEH-T1-GE3
1095773-SQ1912EEH-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1912EEH-T1-GE3 1095773-SQ1912EEH-T1-GE3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1095773-SQ1912EEH-T1 -GE3 Packaging: Tape & Reel Mounting: SMD (SMT) Number of Elements: 2 Power Dissipation: 1.5 W Number of Pins: 6 Rise Time: 51 ns Fall Time: 142 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SC Popularity: Low Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 34 ns Continuous Drain Current (ID): 800 mA Turn-Off Delay Time: 431 ns Gate to Source Voltage (Vgs): 12 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1095773-SQ1912EEH-T1-GE3
Packaging: Tape & Reel
Mounting: SMD (SMT)
Number of Elements: 2
Power Dissipation: 1.5 W
Number of Pins: 6
Rise Time: 51 ns
Fall Time: 142 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SC
Popularity: Low
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Turn-On Delay Time: 34 ns
Continuous Drain Current (ID): 800 mA
Turn-Off Delay Time: 431 ns
Gate to Source Voltage (Vgs): 12 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1095773-SQ1912EEH-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQ1912EEH-T1-GE3
Package Type SOT3; SC
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