Win Source Part Number: 1277671-SISS42DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 40.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS42DN-T1-GE3CT,SI
Base Product Number: SISS42
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Trans MOSFET N-CH 100V 11.8A 8-Pin PowerPAK 1212 EP T/R Product overview: SISS42DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 11.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 11.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS42DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 100V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 100V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET N-CH 100V 11.8/40.5A PPAK
MOSFET N-CH 100V 11.8/40.5A PPAK
MOSFET, N-CH, 100V, 40.5A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:40.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277671-SISS42DN-T1-GE3 | 278-SISS42DN-T1-GE3 | SISS42DN-T1-GE3TR-ND | SISS42DN-T1-GE3 | SISS42DN-T1-GE3 | 56AC6579 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 100V 11.8A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 40.5A, Powerpak 1212; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | SOT3 | Tape and Reel | PowerPAK® 1212-8S | PowerPAK® 1212-8S | -55degC ~ 150degC (TJ) | TO-3 |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| Transconductance | 0.0460 kS |
