MOSFET N-CH 25V 16A PPAK 1212-8
Manufacturer: Vishay
Win Source Part Number: 064667-SIS436DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 855pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
N-Channel 25V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 25V 16A PPAK 1212-8
MOSFET N-CH 25V 16A PPAK 1212-8
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIS436DN-T1-GE3 | 064667-SIS436DN-T1-GE3 | SIS436DN-T1-GE3TR-ND | 880-SIS436DN-T1-GE3 | SIS436DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS436DN-T1-GE3 | Single FETs, MOSFETs | MOSFET N-CH 25V 16A PPAK 1212-8 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | ||
| IDSS | 16000 milliamps | ||||
| PD | 3500 milliwatts | 3500 to 27700 milliwatts | 3500 milliwatts |
