Vishay Intertechnology, Inc. Single FETs, MOSFETs SIS427EDN-T1-GE3

P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-CH MOSFET -30V -50A 10.6mR Surface Mount Product overview: SIS427EDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -30V, -50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -30V, -50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS427EDN-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 50A PPAK1212-8

Manufacturer: Vishay
Win Source Part Number: 1096497-SIS427EDN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 1930pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 10.6 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): DMG7401SFGQ-13; SIS439DNT-T1-GE3; SiS427EDN-T1-GE3; Si7617DN-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance