Vishay Intertechnology, Inc. Single FETs, MOSFETs SIRS578DPW-T1-RE3

N-channel 150 V MOSFET in a PowerPAK SO-8SW package, measuring 6.00 mm × 5.00 mm, designed for synchronous rectification, DC/DC conversion, and battery management. It has a maximum on-resistance of 0.0098 Ω at 7.5 V gate drive and a total gate charge of 25.7 nC. The device is rated for a continuous drain current of 93 A at 25 °C case temperature and supports single-pulse avalanche energy up to 50 mJ. Thermal resistance from junction to case is 0.73 °C/W maximum. The part is lead-free, halogen-free, and meets AEC-Q200 and RoHS standards.