N-Ch PowerPAK SO-8 BWL 30V 7.5mohm@10V
N-Ch PowerPAK SO-8 BWL 30V 7.5mohm@10V
N-Ch PowerPAK SO-8 BWL 30V 7.5mohm@10V
MOSFET N-CH 30V 33A PPAK SO-8
N-Channel 30V 33A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 33A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 33A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8
Power Field-Effect Transistor, 33A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Product overview: SIRA18DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 33A, 30V, 0.0075ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 33A, 30V, 0.0075ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA18DP-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 101919-SIRA18DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 21.5nC @ 10V
Max Input Capacitance: 1000pF @ 15V
Maximum Gate-Source Voltage: +20V, -16V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): NTMFS4921NT3G; RJK0305DPB-02#J0; NTMFS4921NT1G;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Communications & Networking
30V 33A 7.5mΩ@10A,10V 2.4V@250uA null PowerPAK-SO-8 MOSFETs ROHS
MOSFET, N-CH, 30V, 33A, POWERPAK SO; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
MOSFET N-CH 30V 33A PPAK SO-8
MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV
| RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2567433 | SIRA18DP-T1-GE3 | SIRA18DP-T1-GE3DKR-ND | 278-SIRA18DP-T1-GE3 | 101919-SIRA18DP-T1-GE3 | SIRA18DP-T1-GE3 | 19X1949 | SIRA18DP-T1-GE3 | 880-SIRA18DP-T1-GE3 |
| Product Name | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 33A 30V 0.0075ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA18DP-T1-GE3 | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 30V, 33A, Powerpak So; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV |
| Package Type | SO-8; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | |||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 33000 milliamps | 33000 milliamps |
