MOSFET N-CH 40V 60A PPAK SO-8 Product overview: SIR644DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR644DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 40V 60A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 1096475-SIR644DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 3200pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 40V 60A PPAK SO-8
MOSFET 40V 2.7mOhm@60A 60A N-CH
MOSFET N-CH 40V 60A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIR644DP-T1-GE3 | SIR644DP-T1-GE3TR-ND | 1096475-SIR644DP-T1-GE3 | SIR644DP-T1-GE3 | 880-SIR644DP-T1-GE3 | SIR644DP-T1-GE3 |
| Product Name | 40V 60A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR644DP-T1-GE3 | Single FETs, MOSFETs | MOSFET 40V 2.7mOhm@60A 60A N-CH | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 5200 milliwatts | 5200 to 69000 milliwatts | 5200 milliwatts | 5200 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | 3200 pF @ 20 V | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel |
