Vishay Intertechnology, Inc. MOSFET Transistor SIR606DP-T1-GE3

Description
Power Field-Effect Transistor, Product overview: SIR606DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR606DP-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
Power Field-Effect Transistor, Product overview: SIR606DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR606DP-T1-GE3 can be used for catalog matching and distributor lookup.
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MOSFET Transistor 278-SIR606DP-T1-GE3
Power Field-Effect Transistor, Product overview: SIR606DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR606DP-T1-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SIR606DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR606DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277596-SIR606DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277596-SIR606DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277596-SIR606DP-T1-GE3
Win Source Part Number: 1277596-SIR606DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 44.5W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIR606DP-T1-GE3CT,SI R606DP-T1-GE3TR,SIR6 06DP-T1-GE3DKR Base Product Number: SIR606 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Win Source Part Number: 1277596-SIR606DP-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 44.5W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIR606DP-T1-GE3CT,SIR606DP-T1-GE3TR,SIR606DP-T1-GE3DKR
Base Product Number: SIR606
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIR606DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR606DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIR606DP-T1-GE3DKR-ND
N-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR606DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR606DP-T1-GE3CT-ND
Single FETs, MOSFETs SIR606DP-T1-GE3CT-ND
N-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR606DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR606DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR606DP-T1-GE3TR-ND
N-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR606DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR606DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR606DP-T1-GE3
MOSFET N-CH 100V 37A PPAK SO-8

MOSFET N-CH 100V 37A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V Vds 20V Vgs PowerPAK SO-8

MOSFET 100V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SIR606DP-T1-GE3 1277596-SIR606DP-T1-GE3 SIR606DP-T1-GE3DKR-ND SIR606DP-T1-GE3 SIR606DP-T1-GE3
Product Name MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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