N-Channel 400V 6A (Tc) 104W (Tc) Through Hole TO-220AB
MOSFET N-Ch 400V 6A Low Cap. TO220AB
MOSFET N-Ch 400V 6A Low Cap. TO220AB
MOSFET N-Ch 400V 6A Low Cap. TO220AB
N-Channel MOSFET, 400V, 6A, 1Ω RdsOn, TO-220AB Product overview: SIHP6N40D-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIHP6N40D-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 756574-SIHP6N40D-GE3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 104W
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 6A
Rds On (Maximum) at Id, Vgs: 1Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 311pF at 100V
MOSFET 400V Vds 30V Vgs TO-220AB
MOSFET N-CH 400V 6A TO220AB
VISHAY SIHP6N40D-GE3 MOSFET Transistor, N Channel, 6 A, 400 V, 0.85 ohm, 10 V, 3 V
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHP6N40D-GE3-ND | 7879187 | 7879187P | 2088-SIHP6N40D-GE3 | 756574-SIHP6N40D-GE3 | SIHP6N40D-GE3 | SIHP6N40D-GE3 | 880-SIHP6N40D-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | N-Channel 400V 6A MOSFET Transistor | FETs - Single - SIHP6N40D-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | VISHAY SIHP6N40D-GE3 MOSFET Transistor, N Channel, 6 A, 400 V, 0.85 ohm, 10 V, 3 V |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220AB | TO-220; SOT3 | TO-220; TO-220-3 | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| Number of units in IC | 1 | 1 | ||||||
| PD | 104000 milliwatts | 104000 milliwatts | 104000 milliwatts |
