Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP25N50E-BE3

N-Channel MOSFET in a TO-220AB package rated for 500 V drain-source voltage, 26 A continuous drain current at 25°C, and 250 W maximum power dissipation. It features a maximum on-state resistance of 0.145 Ω at 10 V gate-source voltage, a total gate charge of 86 nC, and is rated for 273 mJ single pulse avalanche energy. The device meets RoHS standards and is lead-free and halogen-free, suited for hard-switched topologies, PFC, SMPS, computing, and lighting applications.