Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHP24N80AE-GE3

Description
Win Source Part Number: 1277726-SIHP24N80AE- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 208W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: ,742-SIHP24N80AE-GE3 DKR,742-SIHP24N80AE- GE3DKR,742-SIHP24N80 AE-GE3TR,742-SIHP24N 80AE-GE3CT,742-SIHP2 4N80AE-GE3,742-SIHP2 4N80AE-GE3CT,742-SIH P24N80AE-GE3TR Base Product Number: SIHP24 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277726-SIHP24N80AE-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 742-SIHP24N80AE-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP24N80AE-GE3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Mosfet, N-Ch, 800V, 21A, 150Deg C, 208W Rohs Compliant Vishay - 64AH1457 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1277726-SIHP24N80AE- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 208W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: ,742-SIHP24N80AE-GE3 DKR,742-SIHP24N80AE- GE3DKR,742-SIHP24N80 AE-GE3TR,742-SIHP24N 80AE-GE3CT,742-SIHP2 4N80AE-GE3,742-SIHP2 4N80AE-GE3CT,742-SIH P24N80AE-GE3TR Base Product Number: SIHP24 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277726-SIHP24N80AE-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277726-SIHP24N80AE-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277726-SIHP24N80AE-GE3
Win Source Part Number: 1277726-SIHP24N80AE- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 208W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: ,742-SIHP24N80AE-GE3 DKR,742-SIHP24N80AE- GE3DKR,742-SIHP24N80 AE-GE3TR,742-SIHP24N 80AE-GE3CT,742-SIHP2 4N80AE-GE3,742-SIHP2 4N80AE-GE3CT,742-SIH P24N80AE-GE3TR Base Product Number: SIHP24 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277726-SIHP24N80AE-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: ,742-SIHP24N80AE-GE3DKR,742-SIHP24N80AE-GE3DKR,742-SIHP24N80AE-GE3TR,742-SIHP24N80AE-GE3CT,742-SIHP24N80AE-GE3,742-SIHP24N80AE-GE3CT,742-SIHP24N80AE-GE3TR
Base Product Number: SIHP24
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIHP24N80AE-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHP24N80AE-GE3-ND
Single FETs, MOSFETs 742-SIHP24N80AE-GE3-ND
N-Channel 800V 21A (Tc) 208W (Tc) Through Hole TO-220AB

N-Channel 800V 21A (Tc) 208W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP24N80AE-GE3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP24N80AE-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP24N80AE-GE3
MOSFET N-CH 800V 21A TO220AB

MOSFET N-CH 800V 21A TO220AB

Supplier's Site
Mosfet, N-Ch, 800V, 21A, 150Deg C, 208W Rohs Compliant Vishay - 64AH1457 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 21A, 150Deg C, 208W Rohs Compliant Vishay
64AH1457
Mosfet, N-Ch, 800V, 21A, 150Deg C, 208W Rohs Compliant Vishay 64AH1457
MOSFET, N-CH, 800V, 21A, 150DEG C, 208W ROHS COMPLIANT: YES

MOSFET, N-CH, 800V, 21A, 150DEG C, 208W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277726-SIHP24N80AE-GE3 742-SIHP24N80AE-GE3-ND SIHP24N80AE-GE3 64AH1457
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 800V, 21A, 150Deg C, 208W Rohs Compliant Vishay
Polarity N-Channel N-Channel
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