Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP12N65E-GE3 SIHP12N65E-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096437-SIHP12N65E-G E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 156W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1224pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096437-SIHP12N65E-G E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 156W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1224pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP12N65E-GE3 - 1096437-SIHP12N65E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP12N65E-GE3
1096437-SIHP12N65E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP12N65E-GE3 1096437-SIHP12N65E-GE3
Manufacturer: Vishay Win Source Part Number: 1096437-SIHP12N65E-G E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 156W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 1224pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096437-SIHP12N65E-GE3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 1224pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 12A 650V 0.38ohm MOSFET Transistor
278-SIHP12N65E-GE3
N-Channel 12A 650V 0.38ohm MOSFET Transistor 278-SIHP12N65E-GE3
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHP12N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 650V, 0.38ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 650V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP12N65E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHP12N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 650V, 0.38ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 650V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP12N65E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHP12N65E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHP12N65E-GE3-ND
Single FETs, MOSFETs SIHP12N65E-GE3-ND
N-Channel 650V 12A (Tc) 156W (Tc) Through Hole TO-220AB

N-Channel 650V 12A (Tc) 156W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 650V Vds 30V Vgs TO-220AB

MOSFET 650V Vds 30V Vgs TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP12N65E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP12N65E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP12N65E-GE3
MOSFET N-CH 650V 12A TO220AB

MOSFET N-CH 650V 12A TO220AB

Supplier's Site
Mosfet, N-Ch, 650V, 12A, To-220Ab Rohs Compliant Vishay - 26AK5805 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 12A, To-220Ab Rohs Compliant Vishay
26AK5805
Mosfet, N-Ch, 650V, 12A, To-220Ab Rohs Compliant Vishay 26AK5805
MOSFET, N-CH, 650V, 12A, TO-220AB ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 12A, TO-220AB ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096437-SIHP12N65E-GE3 278-SIHP12N65E-GE3 SIHP12N65E-GE3-ND SIHP12N65E-GE3 SIHP12N65E-GE3 26AK5805
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP12N65E-GE3 N-Channel 12A 650V 0.38ohm MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 12A, To-220Ab Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 650 volts
PD 156000 milliwatts 156000 milliwatts
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