Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP11N80AEF-GE3

The SiHP11N80AEF-GE3 is an N-channel MOSFET in a TO-220AB package with a drain-source voltage rating of 800 V and a typical on-state resistance of 0.420 Ω at 25 °C and 10 V gate-source voltage. It features a maximum gate charge of 41 nC, an avalanche energy rating of 88 mJ, and an integrated Zener diode for ESD protection. The device has a continuous drain current of 8 A at 25 °C and 5 A at 100 °C, with a maximum power dissipation of 78 W and a junction-to-case thermal resistance of 1.6 °C/W. The operating junction and storage temperature range is from -55 °C to +150 °C.